RN2102MFV,L3F(CT Toshiba Semiconductor and Storage


docget.jsp?did=5883&prodName=RN2102MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.057 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2102MFV,L3F(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN2102MFV,L3F(CT nach Preis ab 0.05 EUR bis 0.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN2102MFV,L3F(CT RN2102MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 15720 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
85+0.25 EUR
158+0.13 EUR
500+0.1 EUR
1000+0.073 EUR
2000+0.06 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2102MFV,L3F(CT Toshiba RN2102MFV_datasheet_en_20210818-1116149.pdf Bipolar Transistors - Pre-Biased 10kohm 10kohm 0.1A SOT-723 50V
auf Bestellung 7450 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.36 EUR
11+0.33 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.077 EUR
2500+0.058 EUR
8000+0.05 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2102MFV,L3F(CT docget.jsp?did=5883&prodName=RN2102MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 15720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
85+0.25 EUR
158+0.13 EUR
500+0.1 EUR
1000+0.073 EUR
2000+0.06 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2102MFV,L3F(CT RN2102MFV_datasheet_en_20210818-1116149.pdf
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased 10kohm 10kohm 0.1A SOT-723 50V
auf Bestellung 7450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+0.36 EUR
11+0.33 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.077 EUR
2500+0.058 EUR
8000+0.05 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH