Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2103,LXHF(CT
RN2103,LXHF(CT

RN2103,LXHF(CT Toshiba Semiconductor and Storage

RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103 Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
Mindestbestellmenge: 3000
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Technische Details RN2103,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.

Weitere Produktangebote RN2103,LXHF(CT nach Preis ab 0.11 EUR bis 0.83 EUR

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RN2103,LXHF(CT RN2103,LXHF(CT Hersteller : Toshiba RN2103_datasheet_en_20220913-1627135.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=22kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
64+0.82 EUR
88+ 0.6 EUR
230+ 0.23 EUR
1000+ 0.17 EUR
3000+ 0.13 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
Mindestbestellmenge: 64
RN2103,LXHF(CT RN2103,LXHF(CT Hersteller : Toshiba Semiconductor and Storage RN2103_datasheet_en_20220913.pdf?did=18841&prodName=RN2103 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
43+ 0.62 EUR
100+ 0.35 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32