Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2105MFV,L3XHF(CT
RN2105MFV,L3XHF(CT

RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage

docget.jsp?did=5883&prodName=RN2105MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.086 EUR
Mindestbestellmenge: 8000
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Technische Details RN2105MFV,L3XHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN2105MFV,L3XHF(CT nach Preis ab 0.065 EUR bis 0.56 EUR

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Preis ohne MwSt
RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2105MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
Mindestbestellmenge: 33
RN2105MFV,L3XHF(CT RN2105MFV,L3XHF(CT Hersteller : Toshiba RN2105MFV_datasheet_en_20210818-1116158.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723)
auf Bestellung 15900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.56 EUR
10+ 0.41 EUR
100+ 0.16 EUR
1000+ 0.099 EUR
2500+ 0.084 EUR
8000+ 0.072 EUR
24000+ 0.065 EUR
Mindestbestellmenge: 6