RN2106MFV,L3XHF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.13 EUR |
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Technische Details RN2106MFV,L3XHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote RN2106MFV,L3XHF(CT nach Preis ab 0.096 EUR bis 0.88 EUR
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_SPL.jpg "RN2106MFV,L3XHF(CT") |
RN2106MFV,L3XHF(CT | Hersteller : Toshiba |
Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723) |
auf Bestellung 15880 Stücke: Lieferzeit 14-28 Tag (e) |
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RN2106MFV,L3XHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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