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RN2107,LXHF(CT

RN2107,LXHF(CT Toshiba Semiconductor and Storage

docget.jsp?did=18845&prodName=RN2108
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.093 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2107,LXHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A SSM, Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN2107,LXHF(CT nach Preis ab 0.084 EUR bis 0.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN2107,LXHF(CT RN2107,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2108 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LXHF(CT RN2107,LXHF(CT Toshiba 353CF49F7A2EF704E146BA17D790C751990136324510AE6F2BE822DD23F751E5.pdf Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-416)
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.48 EUR
10+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.095 EUR
6000+0.084 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LXHF(CT docget.jsp?did=18845&prodName=RN2108
RN2107,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LXHF(CT 353CF49F7A2EF704E146BA17D790C751990136324510AE6F2BE822DD23F751E5.pdf
RN2107,LXHF(CT
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-416)
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.48 EUR
10+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.095 EUR
6000+0.084 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH