RN2107ACT(TPL3) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
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Technische Details RN2107ACT(TPL3) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 80 mA, Supplier Device Package: CST3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount.
Weitere Produktangebote RN2107ACT(TPL3)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RN2107ACT(TPL3) | Toshiba |
 Bipolar Transistors - Pre-Biased Gen Purp Trans PNP CST3, 50V, 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RN2107ACT(TPL3) |
|
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased Gen Purp Trans PNP CST3, 50V, 100A
Bipolar Transistors - Pre-Biased Gen Purp Trans PNP CST3, 50V, 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH