RN2110ACT(TPL3) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.08 EUR |
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Technische Details RN2110ACT(TPL3) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: CST3, Part Status: Active, Current - Collector (Ic) (Max): 80 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Resistor - Base (R1): 4.7 kOhms.
Weitere Produktangebote RN2110ACT(TPL3) nach Preis ab 0.23 EUR bis 0.23 EUR
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RN2110ACT(TPL3) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|