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RN2110MFV,L3F

RN2110MFV,L3F Toshiba Semiconductor and Storage

RN2111MFV_datasheet_en_20190107.pdf?did=5885&prodName=RN2111MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 7980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
79+ 0.33 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
2000+ 0.08 EUR
Mindestbestellmenge: 56
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Technische Details RN2110MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms.

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RN2110MFV,L3F RN2110MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN2111MFV_datasheet_en_20190107.pdf?did=5885&prodName=RN2111MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
RN2110MFV,L3F RN2110MFV,L3F Hersteller : Toshiba RN2110MFV_datasheet_en_20190107-1760696.pdf Digital Transistors Bias Resistor Built-in Transistor
Produkt ist nicht verfügbar