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RN2113,LF(CT

RN2113,LF(CT Toshiba Semiconductor and Storage

docget.jsp?did=18854&prodName=RN2113 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.059 EUR
Mindestbestellmenge: 3000
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Technische Details RN2113,LF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 47 kOhms.

Weitere Produktangebote RN2113,LF(CT nach Preis ab 0.085 EUR bis 0.35 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2113,LF(CT RN2113,LF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18854&prodName=RN2113 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
73+ 0.3 EUR
150+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
Mindestbestellmenge: 50
RN2113,LF(CT RN2113,LF(CT Hersteller : Toshiba RN2113_datasheet_en_20210830-1627200.pdf Bipolar Transistors - Pre-Biased PNP BRT, Q1BSR=47kOhm, Q1BER=InfinitykOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
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