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RN2113,LXHF(CT

RN2113,LXHF(CT Toshiba

RN2113_datasheet_en_20210830-1627200.pdf Hersteller: Toshiba
Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.54 EUR
10+0.40 EUR
100+0.23 EUR
1000+0.11 EUR
3000+0.09 EUR
9000+0.08 EUR
24000+0.07 EUR
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Technische Details RN2113,LXHF(CT Toshiba

Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 47 kOhms.

Weitere Produktangebote RN2113,LXHF(CT

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RN2113,LXHF(CT RN2113,LXHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18854&prodName=RN2113 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2113,LXHF(CT RN2113,LXHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18854&prodName=RN2113 Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH