RN2113,LXHF(CT Toshiba
Hersteller: ToshibaBipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 0.8 EUR |
| 89+ | 0.59 EUR |
| 157+ | 0.33 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN2113,LXHF(CT Toshiba
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 47 kOhms.
Weitere Produktangebote RN2113,LXHF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
RN2113,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM, Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |
|
|
|
RN2113,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM, Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |