RN2113MFV,L3F

RN2113MFV,L3F Toshiba Semiconductor and Storage


docget.jsp?did=5886&prodName=RN2113MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.05 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2113MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 47 kOhms.

Weitere Produktangebote RN2113MFV,L3F nach Preis ab 0.05 EUR bis 0.30 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN2113MFV,L3F RN2113MFV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5886&prodName=RN2113MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
81+0.22 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RN2113MFV,L3F RN2113MFV,L3F Hersteller : Toshiba RN2113MFV_datasheet_en_20190107-1760697.pdf Bipolar Transistors - Pre-Biased 47kohm 50V 0.1A SOT-723
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH