RN2308(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 103+ | 0.17 EUR |
| 153+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.079 EUR |
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Technische Details RN2308(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 200 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Cut Tape (CT).
Weitere Produktangebote RN2308(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RN2308(TE85L,F) | Toshiba |
Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RN2308(TE85L,F) |
|
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms
Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH