RN2402S,LF(D Toshiba
| Anzahl | Privatkunde |
|---|---|
| 7110+ | 0.092 EUR |
| 10000+ | 0.081 EUR |
| 100000+ | 0.067 EUR |
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Technische Details RN2402S,LF(D Toshiba
Description: TRANS PREBIAS PNP 50V 0.1A SMINI, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN2402S,LF(D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
RN2402S,LF(D | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SMINIResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RN2402S,LF(D | Toshiba |
Digital Transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RN2402S,LF(D |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A SMINI
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN2402S,LF(D |
![]() |
Hersteller: Toshiba
Digital Transistors
Digital Transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


