RN2703JE(TE85L,F)

RN2703JE(TE85L,F) Toshiba Semiconductor and Storage


docget.jsp?did=19089&prodName=RN2705JE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.15 EUR
8000+0.13 EUR
12000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2703JE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.1W ESV, Supplier Device Package: ESV, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN2703JE(TE85L,F) nach Preis ab 0.11 EUR bis 0.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN2703JE(TE85L,F) RN2703JE(TE85L,F) Hersteller : Toshiba A25977129EB5E00CB4B0AD8FC0911B0727D7CB8C78CFA927744ECB102F0DBA91.pdf Digital Transistors ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.73 EUR
10+0.45 EUR
100+0.29 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.15 EUR
4000+0.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RN2703JE(TE85L,F) RN2703JE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 31420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
30+0.6 EUR
100+0.34 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH