RN2709,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 79+ | 0.23 EUR |
| 126+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.091 EUR |
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Technische Details RN2709,LF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV, Supplier Device Package: USV, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 5-TSSOP, SC-70-5, SOT-353, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN2709,LF nach Preis ab 0.063 EUR bis 0.49 EUR
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RN2709,LF | Hersteller : Toshiba |
Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A |
auf Bestellung 8849 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2709,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA USV Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
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