RN2710,LF

RN2710,LF Toshiba Semiconductor and Storage


RN2710_datasheet_en_20191030.pdf?did=18905&prodName=RN2710 Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details RN2710,LF Toshiba Semiconductor and Storage

Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN2710,LF nach Preis ab 0.086 EUR bis 0.7 EUR

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Preis ohne MwSt
RN2710,LF RN2710,LF Hersteller : Toshiba Semiconductor and Storage RN2710_datasheet_en_20191030.pdf?did=18905&prodName=RN2710 Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2710,LF RN2710,LF Hersteller : Toshiba RN2710_datasheet_en_20191030-1627333.pdf Digital Transistors PNP x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 8994 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
108+ 0.48 EUR
264+ 0.2 EUR
1000+ 0.14 EUR
3000+ 0.11 EUR
9000+ 0.088 EUR
24000+ 0.086 EUR
Mindestbestellmenge: 75