RN2712JE(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
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Technische Details RN2712JE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV, Part Status: Active, Supplier Device Package: ESV, Resistor - Base (R1): 22kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN2712JE(TE85L,F) nach Preis ab 0.18 EUR bis 0.99 EUR
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RN2712JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Part Status: Active Supplier Device Package: ESV Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN2712JE(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.18 EUR |