RN2712JE(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.22 EUR |
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Technische Details RN2712JE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Supplier Device Package: ESV, Part Status: Active.
Weitere Produktangebote RN2712JE(TE85L,F) nach Preis ab 0.13 EUR bis 1.22 EUR
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RN2712JE(TE85L,F) | Hersteller : Toshiba |
Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
auf Bestellung 3999 Stücke: Lieferzeit 14-28 Tag (e) |
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RN2712JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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