RN2901,LF(CT Toshiba
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=-50V, IC=-0.1A
| Anzahl | Preis |
|---|---|
| 7+ | 0.43 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.088 EUR |
| 3000+ | 0.07 EUR |
| 9000+ | 0.056 EUR |
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Technische Details RN2901,LF(CT Toshiba
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: US6.
Weitere Produktangebote RN2901,LF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RN2901,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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RN2901,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |