RN2901FE,LXHF(CT

RN2901FE,LXHF(CT Toshiba Semiconductor and Storage


docget.jsp?did=19092&prodName=RN2901FE Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.15 EUR
8000+ 0.14 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2901FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN2901FE,LXHF(CT nach Preis ab 0.15 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2901FE,LXHF(CT RN2901FE,LXHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2901FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
36+ 0.5 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 27
RN2901FE,LXHF(CT RN2901FE,LXHF(CT Hersteller : Toshiba RN2901FE_datasheet_en_20211223-1608994.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT563)
auf Bestellung 7990 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
77+ 0.68 EUR
177+ 0.29 EUR
1000+ 0.21 EUR
4000+ 0.2 EUR
8000+ 0.17 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 57