RN2905,LXHF(CT

RN2905,LXHF(CT Toshiba Semiconductor and Storage


RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901 Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2905,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote RN2905,LXHF(CT nach Preis ab 0.15 EUR bis 1.03 EUR

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RN2905,LXHF(CT RN2905,LXHF(CT Hersteller : Toshiba Semiconductor and Storage RN2901_datasheet_en_20210824.pdf?did=18907&prodName=RN2901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
31+ 0.73 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 23
RN2905,LXHF(CT RN2905,LXHF(CT Hersteller : Toshiba RN2905_datasheet_en_20230112-1140050.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=2.2kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363)
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
51+1.03 EUR
68+ 0.77 EUR
120+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
3000+ 0.17 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 51