RN2906FE,LXHF(CT

RN2906FE,LXHF(CT Toshiba Semiconductor and Storage


RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2906FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN2906FE,LXHF(CT nach Preis ab 0.12 EUR bis 0.64 EUR

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RN2906FE,LXHF(CT RN2906FE,LXHF(CT Hersteller : Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
45+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE,LXHF(CT RN2906FE,LXHF(CT Hersteller : Toshiba RN2906FE_datasheet_en_20211223-1150899.pdf Digital Transistors AUTO AEC-Q TR PNPx2 Q1BSR=4.7kOhm Q1BER=47kOhm Q2BSR=4.7kOhm Q2BER=47kOhm VCEO=-50V IC=-0.1A SOT563
auf Bestellung 7988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
4000+0.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH