RN2908,LF(CT

RN2908,LF(CT Toshiba Semiconductor and Storage


RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908 Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.073 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2908,LF(CT Toshiba Semiconductor and Storage

Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN2908,LF(CT nach Preis ab 0.084 EUR bis 0.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2908,LF(CT RN2908,LF(CT Hersteller : Toshiba Semiconductor and Storage RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908 Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
60+ 0.3 EUR
122+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 40
RN2908,LF(CT RN2908,LF(CT Hersteller : Toshiba RN2908_datasheet_en_20210824-1627347.pdf Bipolar Transistors - Pre-Biased PNP x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 5900 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
82+0.63 EUR
100+ 0.53 EUR
187+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
9000+ 0.094 EUR
Mindestbestellmenge: 82