RN2908FE(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.091 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN2908FE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual).
Weitere Produktangebote RN2908FE(TE85L,F) nach Preis ab 0.1 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RN2908FE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA ES6 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 |
auf Bestellung 5002 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
RN2908FE(TE85L,F) | Hersteller : Toshiba |
Digital Transistors ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz |
Produkt ist nicht verfügbar |