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RN2911FE(TE85L,F)

RN2911FE(TE85L,F) Toshiba Semiconductor and Storage

RN2910FE-11FE.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
46+0.39 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.1 EUR
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Technische Details RN2911FE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.1W ES6, Part Status: Active, Supplier Device Package: ES6, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount.

Weitere Produktangebote RN2911FE(TE85L,F)

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RN2911FE(TE85L,F) RN2911FE(TE85L,F) Toshiba Semiconductor and Storage RN2910FE-11FE.pdf Description: TRANS 2PNP PREBIAS 0.1W ES6
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2911FE(TE85L,F) RN2911FE(TE85L,F) Toshiba RN2911FE_datasheet_en_20210818-1609102.pdf Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2911FE(TE85L,F) RN2910FE-11FE.pdf
RN2911FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2911FE(TE85L,F) RN2911FE_datasheet_en_20210818-1609102.pdf
RN2911FE(TE85L,F)
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH