RN2963(TE85L,F)

RN2963(TE85L,F) Toshiba Semiconductor and Storage


RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 21
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Technische Details RN2963(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.2W US6, Part Status: Active, Supplier Device Package: US6, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Power - Max: 200mW.

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RN2963(TE85L,F) RN2963(TE85L,F) Hersteller : Toshiba Semiconductor and Storage RN2961_datasheet_en_20191118.pdf?did=18914&prodName=RN2961 Description: TRANS 2PNP PREBIAS 0.2W US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Power - Max: 200mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2963(TE85L,F) RN2963(TE85L,F) Hersteller : Toshiba RN2963_datasheet_en_20191118-1608961.pdf Digital Transistors US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
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Im Einkaufswagen  Stück im Wert von  UAH