auf Bestellung 2900 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 0.93 EUR |
| 74+ | 0.71 EUR |
| 130+ | 0.4 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.14 EUR |
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Technische Details RN4603(TE85L,F) Toshiba
Description: TRANS NPN/PNP PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SM6, Part Status: Active.
Weitere Produktangebote RN4603(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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RN4603(TE85L,F) | Hersteller : Toshiba |
 Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SM T/R |
Produkt ist nicht verfügbar |
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RN4603(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN4603(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |