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RN4606(TE85L,F)

RN4606(TE85L,F) Toshiba Semiconductor and Storage

RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 3939 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
43+ 0.61 EUR
100+ 0.31 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
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Technische Details RN4606(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SM6, Part Status: Active.

Weitere Produktangebote RN4606(TE85L,F) nach Preis ab 0.12 EUR bis 0.89 EUR

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RN4606(TE85L,F) RN4606(TE85L,F) Hersteller : Toshiba RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V
auf Bestellung 226 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
84+ 0.62 EUR
200+ 0.26 EUR
1000+ 0.19 EUR
3000+ 0.15 EUR
9000+ 0.13 EUR
24000+ 0.12 EUR
Mindestbestellmenge: 59
RN4606(TE85L,F) RN4606(TE85L,F) Hersteller : Toshiba rn4606_datasheet_en_20191101.pdf Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SM T/R
Produkt ist nicht verfügbar
RN4606(TE85L,F) RN4606(TE85L,F) Hersteller : Toshiba Semiconductor and Storage RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar