RN4607(TE85L,F)

RN4607(TE85L,F) Toshiba Semiconductor and Storage


docget.jsp?did=18934&prodName=RN4607 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 795 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
29+ 0.76 EUR
100+ 0.43 EUR
500+ 0.29 EUR
Mindestbestellmenge: 22
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Technische Details RN4607(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SM6, Part Status: Active.

Weitere Produktangebote RN4607(TE85L,F) nach Preis ab 0.15 EUR bis 0.88 EUR

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Preis ohne MwSt
RN4607(TE85L,F) RN4607(TE85L,F) Hersteller : Toshiba RN4607_datasheet_en_20191101-1609099.pdf Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
auf Bestellung 3000 Stücke:
Lieferzeit 320-334 Tag (e)
Anzahl Preis ohne MwSt
60+0.88 EUR
80+ 0.66 EUR
139+ 0.37 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
3000+ 0.15 EUR
Mindestbestellmenge: 60
RN4607(TE85L,F) RN4607(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18934&prodName=RN4607 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
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