RN4903,LF(CT Toshiba
Hersteller: ToshibaDigital Transistors PNP + NPN BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 3454 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 80+ | 0.65 EUR |
| 119+ | 0.44 EUR |
| 286+ | 0.18 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.099 EUR |
| 9000+ | 0.081 EUR |
| 24000+ | 0.078 EUR |
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Technische Details RN4903,LF(CT Toshiba
Description: PNP + NPN BRT Q1BSR22KOHM Q1BER2, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote RN4903,LF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RN4903,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: PNP + NPN BRT Q1BSR22KOHM Q1BER2 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN4903,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: PNP + NPN BRT Q1BSR22KOHM Q1BER2 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |