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RN4907FE,LF(CT

RN4907FE,LF(CT Toshiba

RN4907FE_datasheet_en_20210818-1140148.pdf Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 4208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.32 EUR
14+0.20 EUR
100+0.09 EUR
1000+0.07 EUR
8000+0.05 EUR
24000+0.05 EUR
100000+0.04 EUR
Mindestbestellmenge: 9
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Technische Details RN4907FE,LF(CT Toshiba

Description: TRANS NPN/PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote RN4907FE,LF(CT nach Preis ab 0.08 EUR bis 0.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN4907FE,LF(CT RN4907FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
RN4907FE,LF(CT RN4907FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4907FE_datasheet_en_20210818.pdf?did=19029&prodName=RN4907FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
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