RN4908,LF(CT

RN4908,LF(CT Toshiba Semiconductor and Storage


RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN4908,LF(CT Toshiba Semiconductor and Storage

Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN4908,LF(CT nach Preis ab 0.05 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN4908,LF(CT RN4908,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
108+0.16 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
RN4908,LF(CT RN4908,LF(CT Hersteller : Toshiba RN4908_datasheet_en_20210824-1627252.pdf Digital Transistors PNP + NPN BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 8862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.44 EUR
10+0.30 EUR
100+0.12 EUR
1000+0.08 EUR
3000+0.07 EUR
9000+0.06 EUR
24000+0.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH