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RN4983,LF(CT Toshiba


1F319A7DF1507822E78383625EE2485723D9768DC8702CA265B0761ED02F6AC5.pdf
Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 1680 Stücke:

Lieferzeit 10-14 Tag (e)
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6+0.55 EUR
10+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.092 EUR
6000+0.083 EUR
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Technische Details RN4983,LF(CT Toshiba

Description: TRANS NPN/PNP PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN4983,LF(CT nach Preis ab 0.11 EUR bis 0.58 EUR

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RN4983,LF(CT RN4983,LF(CT Toshiba Semiconductor and Storage RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4983,LF(CT RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
31+0.58 EUR
45+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH