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RN4983,LF(CT

RN4983,LF(CT Toshiba

rn4983_datasheet_en_20191128.pdf Hersteller: Toshiba
Trans Digital BJT NPN/PNP 50V 100mA 200mW Automotive AEC-Q101 6-Pin US T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1802+0.088 EUR
2054+ 0.074 EUR
2151+ 0.068 EUR
Mindestbestellmenge: 1802
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Technische Details RN4983,LF(CT Toshiba

Description: TRANS NPN/PNP PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN4983,LF(CT nach Preis ab 0.1 EUR bis 0.87 EUR

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Preis ohne MwSt
RN4983,LF(CT RN4983,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
45+ 0.58 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 31
RN4983,LF(CT RN4983,LF(CT Hersteller : Toshiba RN4983_datasheet_en_20210824-1150775.pdf Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
auf Bestellung 4700 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
81+ 0.64 EUR
209+ 0.25 EUR
1000+ 0.17 EUR
3000+ 0.13 EUR
9000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 60
RN4983,LF(CT RN4983,LF(CT Hersteller : Toshiba rn4983_datasheet_en_20191128.pdf Silicon NPN-PNP Epitaxial Type
Produkt ist nicht verfügbar
RN4983,LF(CT RN4983,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar