RN4983,LF(CT Toshiba
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1802+ | 0.081 EUR |
| 2054+ | 0.069 EUR |
| 2151+ | 0.063 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN4983,LF(CT Toshiba
Description: TRANS NPN/PNP PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.
Weitere Produktangebote RN4983,LF(CT nach Preis ab 0.058 EUR bis 0.58 EUR
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RN4983,LF(CT | Hersteller : Toshiba |
 Digital Transistors Bias Resistor Built-in transistor |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4983,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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RN4983,LF(CT | Hersteller : Toshiba |
Silicon NPN-PNP Epitaxial Type |
Produkt ist nicht verfügbar |
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RN4983,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |