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RN4983FE,LF(CT

RN4983FE,LF(CT Toshiba Semiconductor and Storage

RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 40
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Technische Details RN4983FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4983FE,LF(CT nach Preis ab 0.075 EUR bis 0.65 EUR

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Preis ohne MwSt
RN4983FE,LF(CT RN4983FE,LF(CT Hersteller : Toshiba RN4983FE_datasheet_en_20210818-1151105.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 3870 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
80+0.65 EUR
109+ 0.48 EUR
282+ 0.18 EUR
1000+ 0.11 EUR
8000+ 0.083 EUR
24000+ 0.075 EUR
Mindestbestellmenge: 80
RN4983FE,LF(CT RN4983FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
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