| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.3 EUR |
| 18+ | 0.19 EUR |
| 100+ | 0.088 EUR |
| 1000+ | 0.069 EUR |
| 4000+ | 0.061 EUR |
| 8000+ | 0.052 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN4983FE,LF(CT Toshiba
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Supplier Device Package: ES6, Resistor - Emitter Base (R2): 22kOhms.
Weitere Produktangebote RN4983FE,LF(CT nach Preis ab 0.093 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN4983FE,LF(CT | Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Supplier Device Package: ES6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 3991 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN4983FE,LF(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 80+ | 0.26 EUR |
| 129+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.093 EUR |