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RN4985,LF(CT

RN4985,LF(CT Toshiba Semiconductor and Storage

RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2981 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
61+ 0.43 EUR
124+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
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Technische Details RN4985,LF(CT Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.

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RN4985,LF(CT RN4985,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
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