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RN4987FE,LF(CT

RN4987FE,LF(CT Toshiba Semiconductor and Storage

RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.064 EUR
8000+0.058 EUR
12000+0.054 EUR
20000+0.051 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN4987FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 1NPN 1PNP 50V ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4987FE,LF(CT nach Preis ab 0.046 EUR bis 0.35 EUR

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RN4987FE,LF(CT RN4987FE,LF(CT Hersteller : Toshiba RN4987FE_datasheet_en_20210818-1140118.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 7329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.3 EUR
15+0.2 EUR
100+0.086 EUR
1000+0.07 EUR
4000+0.062 EUR
8000+0.051 EUR
24000+0.046 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE,LF(CT RN4987FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 27872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
84+0.21 EUR
136+0.13 EUR
500+0.095 EUR
1000+0.084 EUR
2000+0.074 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH