RN4988FE,LF(CT

RN4988FE,LF(CT Toshiba Semiconductor and Storage


RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR22KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.065 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN4988FE,LF(CT Toshiba Semiconductor and Storage

Description: NPN + PNP BRT Q1BSR22KOHM Q1BER4, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4988FE,LF(CT nach Preis ab 0.065 EUR bis 0.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN4988FE,LF(CT RN4988FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4988FE_datasheet_en_20210818.pdf?did=19056&prodName=RN4988FE Description: NPN + PNP BRT Q1BSR22KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
67+ 0.27 EUR
136+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.065 EUR
Mindestbestellmenge: 46
RN4988FE,LF(CT RN4988FE,LF(CT Hersteller : Toshiba RN4988FE_datasheet_en_20210818-1627336.pdf Digital Transistors NPN + PNP BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
auf Bestellung 10685 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
90+0.58 EUR
131+ 0.4 EUR
323+ 0.16 EUR
1000+ 0.099 EUR
4000+ 0.096 EUR
8000+ 0.081 EUR
24000+ 0.07 EUR
Mindestbestellmenge: 90