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RN4989FE,LF(CT

RN4989FE,LF(CT Toshiba Semiconductor and Storage

RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.076 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN4989FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 1NPN 1PNP 50V ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4989FE,LF(CT nach Preis ab 0.065 EUR bis 0.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN4989FE,LF(CT RN4989FE,LF(CT Toshiba Semiconductor and Storage RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE,LF(CT Toshiba RN4989FE_datasheet_en_20210818-1627261.pdf Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
auf Bestellung 10929 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.45 EUR
10+0.39 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.092 EUR
4000+0.086 EUR
8000+0.065 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE_datasheet_en_20210818.pdf?did=19059&prodName=RN4989FE
RN4989FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.086 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE,LF(CT RN4989FE_datasheet_en_20210818-1627261.pdf
RN4989FE,LF(CT
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
auf Bestellung 10929 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+0.45 EUR
10+0.39 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.092 EUR
4000+0.086 EUR
8000+0.065 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH