RN4991FE,LF(CT

RN4991FE,LF(CT Toshiba Semiconductor and Storage


RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.064 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN4991FE,LF(CT Toshiba Semiconductor and Storage

Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4991FE,LF(CT nach Preis ab 0.063 EUR bis 0.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN4991FE,LF(CT RN4991FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
RN4991FE,LF(CT RN4991FE,LF(CT Hersteller : Toshiba RN4991FE_datasheet_en_20210818-1627340.pdf Bipolar Transistors - Pre-Biased NPN + PNP BRT, Q1BSR=10kOhm, Q1BER=Inf.kOhm, Q2BSR=10kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A
auf Bestellung 11998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.41 EUR
10+ 0.34 EUR
100+ 0.18 EUR
500+ 0.12 EUR
1000+ 0.081 EUR
4000+ 0.07 EUR
8000+ 0.063 EUR
Mindestbestellmenge: 7