RP1E090XNTCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details RP1E090XNTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 9A MPT6, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: MPT6, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).