RQ1C065UNTR Rohm Semiconductor

Description: MOSFET N-CH 20V 6.5A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).