RQ1C065UNTR Rohm Semiconductor
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 226+ | 0.69 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.52 EUR |
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Technische Details RQ1C065UNTR Rohm Semiconductor
Description: MOSFET N-CH 20V 6.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V.
Weitere Produktangebote RQ1C065UNTR nach Preis ab 0.48 EUR bis 1.57 EUR
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RQ1C065UNTR | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 20V 6.5A 8-Pin TSMT T/R |
auf Bestellung 801 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ1C065UNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 6.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V |
auf Bestellung 2955 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ1C065UNTR | Hersteller : ROHM Semiconductor |
MOSFET 1.5V Drive Nch MOSFET |
auf Bestellung 2406 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RQ1C065UNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 6.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V |
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