RQ1E075XNTCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details RQ1E075XNTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 7.5A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ1E075XNTCR nach Preis ab 0.57 EUR bis 1.58 EUR
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RQ1E075XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7.5A TSMT8 Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA |
auf Bestellung 26828 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ1E075XNTCR | ROHM Semiconductor |
MOSFET 4V Drive Nch MOSFET. MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the |
auf Bestellung 12048 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RQ1E075XNTCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
auf Bestellung 26828 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.65 EUR |
| RQ1E075XNTCR |
|
Hersteller: ROHM Semiconductor
MOSFET 4V Drive Nch MOSFET. MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the
MOSFET 4V Drive Nch MOSFET. MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the
auf Bestellung 12048 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.58 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.68 EUR |
| 3000+ | 0.58 EUR |
| 6000+ | 0.57 EUR |