RQ1E100XNTR ROHM Semiconductor

Description: MOSFET N-CH 30V 10A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).