RQ3C150BCTB

RQ3C150BCTB Rohm Semiconductor


datasheet?p=RQ3C150BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.74 EUR
6000+0.73 EUR
Mindestbestellmenge: 3000
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Technische Details RQ3C150BCTB Rohm Semiconductor

Description: MOSFET P-CHANNEL 20V 30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V.

Weitere Produktangebote RQ3C150BCTB nach Preis ab 0.75 EUR bis 1.95 EUR

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RQ3C150BCTB RQ3C150BCTB Hersteller : ROHM Semiconductor datasheet?p=RQ3C150BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Pch -20V -30A Si MOSFET
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.94 EUR
10+1.57 EUR
100+1.11 EUR
500+0.94 EUR
1000+0.84 EUR
3000+0.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RQ3C150BCTB RQ3C150BCTB Hersteller : Rohm Semiconductor datasheet?p=RQ3C150BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 20V 30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
auf Bestellung 8825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
12+1.60 EUR
100+1.12 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RQ3C150BCTB Hersteller : ROHM SEMICONDUCTOR datasheet?p=RQ3C150BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RQ3C150BCTB SMD P channel transistors
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