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RQ3E070BNTB

RQ3E070BNTB Rohm Semiconductor

rq3e070bntb-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
Mindestbestellmenge: 3000
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Technische Details RQ3E070BNTB Rohm Semiconductor

Description: MOSFET N-CH 30V 7A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V.

Weitere Produktangebote RQ3E070BNTB nach Preis ab 0.28 EUR bis 0.74 EUR

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RQ3E070BNTB RQ3E070BNTB Hersteller : Rohm Semiconductor rq3e070bntb-e.pdf Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.73 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
RQ3E070BNTB RQ3E070BNTB Hersteller : ROHM Semiconductor rq3e070bntb-e-1800029.pdf MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 10820 Stücke:
Lieferzeit 14-28 Tag (e)
RQ3E070BNTB Hersteller : ROHM SEMICONDUCTOR rq3e070bntb-e.pdf RQ3E070BNTB SMD N channel transistors
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