auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 1.31 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.82 EUR |
| 3000+ | 0.77 EUR |
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Technische Details RQ3E075ATTB ROHM Semiconductor
Description: MOSFET P-CHANNEL 30V 18A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V.
Weitere Produktangebote RQ3E075ATTB nach Preis ab 0.84 EUR bis 2.2 EUR
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RQ3E075ATTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 30V 18A 8HSMTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V |
auf Bestellung 2478 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E075ATTB | Hersteller : ROHM SEMICONDUCTOR |
RQ3E075ATTB SMD P channel transistors |
Produkt ist nicht verfügbar |
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RQ3E075ATTB | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CHANNEL 30V 18A 8HSMT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V |
Produkt ist nicht verfügbar |