| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.23 EUR |
| 10+ | 2 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.29 EUR |
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Technische Details RQ3E100BNTB1 ROHM Semiconductor
Description: NCH 30V 21A POWER MOSFET: RQ3E10, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSMT (3.2x3).
Weitere Produktangebote RQ3E100BNTB1 nach Preis ab 0.96 EUR bis 2.43 EUR
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RQ3E100BNTB1 | Rohm Semiconductor |
 Description: NCH 30V 21A POWER MOSFET: RQ3E10Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HSMT (3.2x3) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 3340 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E100BNTB1 |
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Hersteller: Rohm Semiconductor
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: NCH 30V 21A POWER MOSFET: RQ3E10
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |