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RQ3E130BNTB

RQ3E130BNTB Rohm Semiconductor

datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 19
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Technische Details RQ3E130BNTB Rohm Semiconductor

Description: MOSFET N-CH 30V 13A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V.

Weitere Produktangebote RQ3E130BNTB nach Preis ab 0.4 EUR bis 1.35 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RQ3E130BNTB RQ3E130BNTB Hersteller : ROHM Semiconductor datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 2976 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
39+1.35 EUR
49+ 1.06 EUR
100+ 0.8 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
3000+ 0.43 EUR
9000+ 0.4 EUR
Mindestbestellmenge: 39
RQ3E130BNTB RQ3E130BNTB Hersteller : Rohm Semiconductor datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 13A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
RQ3E130BNTB Hersteller : ROHM SEMICONDUCTOR datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RQ3E130BNTB SMD N channel transistors
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