RQ3E180AJTB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.63 EUR |
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Technische Details RQ3E180AJTB Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 11mA, Supplier Device Package: 8-HSMT (3.2x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V.
Weitere Produktangebote RQ3E180AJTB nach Preis ab 0.42 EUR bis 2.55 EUR
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RQ3E180AJTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 39nC On-state resistance: 5.8mΩ Power dissipation: 30W Drain current: 30A Pulsed drain current: 72A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement Case: HSMT8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1196 Stücke: Lieferzeit 7-14 Tag (e) |
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RQ3E180AJTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 39nC On-state resistance: 5.8mΩ Power dissipation: 30W Drain current: 30A Pulsed drain current: 72A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement Case: HSMT8 |
auf Bestellung 1196 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ3E180AJTB | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 18.0A(Id), (2.5V Drive) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180AJTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
auf Bestellung 9867 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E180AJTB | Hersteller : ROHM - Japan |
MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN RQ3E180AJTB TRQ3e180ajtb Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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