RQ3E180AJTB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
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Technische Details RQ3E180AJTB Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 11mA, Supplier Device Package: 8-HSMT (3.2x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V.
Weitere Produktangebote RQ3E180AJTB nach Preis ab 0.82 EUR bis 3.33 EUR
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RQ3E180AJTB | Rohm Semiconductor |
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R |
auf Bestellung 2895 Stücke: Lieferzeit 14-21 Tag (e) |
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RQ3E180AJTB | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 18.0A(Id), (2.5V Drive) |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3E180AJTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 18A/30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 11mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V |
auf Bestellung 10637 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E180AJTB | ROHM - Japan |
MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN RQ3E180AJTB TRQ3e180ajtb Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| RQ3E180AJTB |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 141+ | 1.83 EUR |
| RQ3E180AJTB |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 18.0A(Id), (2.5V Drive)
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 18.0A(Id), (2.5V Drive)
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.27 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.88 EUR |
| 6000+ | 0.82 EUR |
| RQ3E180AJTB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
auf Bestellung 10637 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| RQ3E180AJTB |
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Hersteller: ROHM - Japan
MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN RQ3E180AJTB TRQ3e180ajtb
Anzahl je Verpackung: 10 Stücke
MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN RQ3E180AJTB TRQ3e180ajtb
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.27 EUR |