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RQ3E180BNTB

RQ3E180BNTB ROHM Semiconductor

rq3e180bntb-e.pdf Hersteller: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET
auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
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4+0.92 EUR
10+0.83 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.42 EUR
3000+0.40 EUR
6000+0.38 EUR
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Technische Details RQ3E180BNTB ROHM Semiconductor

Description: MOSFET N-CHANNEL 30V 39A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V.

Weitere Produktangebote RQ3E180BNTB nach Preis ab 0.48 EUR bis 0.94 EUR

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RQ3E180BNTB RQ3E180BNTB Hersteller : Rohm Semiconductor rq3e180bntb-e.pdf Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
auf Bestellung 5051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.94 EUR
100+0.63 EUR
500+0.52 EUR
1000+0.48 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
RQ3E180BNTB Hersteller : ROHM SEMICONDUCTOR rq3e180bntb-e.pdf RQ3E180BNTB SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RQ3E180BNTB RQ3E180BNTB Hersteller : Rohm Semiconductor rq3e180bntb-e.pdf Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH