| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
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Technische Details RQ3E180BNTB ROHM Semiconductor
Description: MOSFET N-CHANNEL 30V 39A 8HSMT, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSMT (3.2x3), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RQ3E180BNTB nach Preis ab 0.57 EUR bis 1.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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RQ3E180BNTB | Rohm Semiconductor |
 Description: MOSFET N-CHANNEL 30V 39A 8HSMTInput Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HSMT (3.2x3) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 5051 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E180BNTB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5051 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.12 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.57 EUR |