auf Bestellung 2429 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
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Technische Details RQ3E180BNTB ROHM Semiconductor
Description: MOSFET N-CHANNEL 30V 39A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V.
Weitere Produktangebote RQ3E180BNTB nach Preis ab 0.48 EUR bis 0.94 EUR
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RQ3E180BNTB | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CHANNEL 30V 39A 8HSMTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
auf Bestellung 5051 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3E180BNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8 Mounting: SMD Case: HSMT8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 72nC On-state resistance: 5.2Ω Power dissipation: 20W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 72A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RQ3E180BNTB | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 39A 8HSMT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
Produkt ist nicht verfügbar |
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| RQ3E180BNTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8 Mounting: SMD Case: HSMT8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 72nC On-state resistance: 5.2Ω Power dissipation: 20W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 72A |
Produkt ist nicht verfügbar |