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RQ3E180BNTB1

RQ3E180BNTB1 Rohm Semiconductor

datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.20 EUR
10+2.02 EUR
100+1.50 EUR
500+1.38 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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Technische Details RQ3E180BNTB1 Rohm Semiconductor

Description: NCH 30V 39A MIDDLE POWER MOSFET:, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V.

Weitere Produktangebote RQ3E180BNTB1 nach Preis ab 1.06 EUR bis 3.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RQ3E180BNTB1 RQ3E180BNTB1 Hersteller : ROHM Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs HSMT8 N CHAN 30V
auf Bestellung 5885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+2.11 EUR
100+1.50 EUR
500+1.26 EUR
1000+1.19 EUR
3000+1.14 EUR
6000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RQ3E180BNTB1 RQ3E180BNTB1 Hersteller : Rohm Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH